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EM6K7
Data Sheet
1
V DS = 10V
Pulsed
1
V GS = 0V
Pulsed
2.5
I D = 0.2A
Ta=25°C
Pulsed
2
Ta= -25°C
Ta=25°C
0.1
Ta = 125 ° C
75 ° C
25 ° C
? 25 ° C
1.5
1
Ta=75°C
Ta=125°C
0.5
I D = 0.02A
0.1
0.01
0.1
1
0.01
0.0
0.5
1
1.5
0
0
2
4
6
8
10
SOURCE-DRAIN VOLTAGE : V SD (V)
DRAIN-CURRENT : I D [A]
GATE-SOURCE VOLTAGE : V GS [V]
Fig.10 Forward Transfer Admittance
vs. Drain Current
Fig.11 Source current vs.
source-drain voltage
Fig.12 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
1000
Ta = 25 ° C
V DD = 10V
V GS = 4V
R G = 10 ?
100
Ciss
Pulsed
100
t d(off)
10
Crss
10
t f
t d(on)
t r
Ta=25°C
f=1MHz
Coss
1
0.01
0.1
1
1
V GS =0V
DRAIN CURRENT : I D (A)
0.01
0.1
1
10
100
DRAIN-SOURCE VOLTAGE : V DS [V]
Fig.13 Switching characteristics
Fig.14 Typical Capacitance
vs. Drain-Source Voltage
Measurement circuit
Pulse width
R G
V GS
I D
D.U.T.
R L
V DD
V DS
V GS
V DS
50%
10%
10%
90%
50%
10%
90%
90%
t d (on)
t on
t r
t d (off)
t f
t off
Fig.1-1 Switching time measurement circuit
Fig.1-2 Switching waveforms
Notice
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
4/4
2009.07 - Rev.A
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